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| HGTP14N40F3VL April 1995 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features * * * * * Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection TJ = +150oC Ignition Energy Capable Applications * Automotive Ignition * Small Engine Ignition * Fuel Ignitor Symbol COLLECTOR Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some specifications are unique to this automotive application and are intended to assure device survival in this harsh environment. The development type number for this device is TA49023. PACKAGING AVAILABILITY PART NUMBER HGTP14N40F3VL PACKAGE TO-220AB BRAND 14N40FVL GATE EMITTER NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTP14N40F3VL 420 420 19 14 10 12 10 17 12 330 83 0.67 -40 to +150 260 6 UNITS V V A A V V mA A A mJ W W/oC oC oC KV Collector-Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Breakdown Voltage RGE = 10k . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous VGE = 4.5V at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 VGE = 4.5V at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC90 Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed or . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Gate-Emitter Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IGEM Open Secondary Turn-Off Current L = 2.3mH at +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICO L = 2.3mH at +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICO Drain to Source Avalanche Energy at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT Power Dissipation Derating TC > +25oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Electrostatic Voltage at 100pF, 1500. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 407-727-9207 | Copyright (c) Intersil Corporation 1999 File Number 3407.2 3-50 Specifications HGTP14N40F3VL Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage SYMBOL BVCES TEST CONDITIONS IC = 10mA, VGE = 0V TC = +150oC TC = +25oC TC = -40oC Collector-Emitter Clamp Bkdn. Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current BVCE(CL) BVECS ICES IC = 10A IC = 1.0mA VCE = 250V VCE = 250V Collector-Emitter Saturation Voltage VCE(SAT) IC = 10A VGE = 4.5V TC = +150oC TC = +25oC TC = +25oC TC = +150oC TC = +25oC TC = +150oC TC = +25oC MIN 345 350 355 350 24 1.0 TYP 370 375 380 385 1.5 MAX 415 420 425 430 50 250 2.0 2.3 2.0 UNITS V V V V V A A V V V Gate-Emitter Threshold Voltage VGE(TH) IC = 1.0mA VCE = VGE VGE = 10V IGES = 1.0mA Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-off Time-Inductive Load IGES BVGES tD(OFF)I + tF(OFF)I 12 - 12 10 16 A V s RL = 32, IC = 10A, RG = 25, L = 550H, VCL = 320V, VGE = 5V, TC = +125oC L = 2.3mH, VG = 5V, Figure 13 TC = +150oC TC = +25oC Inductive Use Test UIS 12 17 - 1.5 - A A oC/W Thermal Resistance RJC 3-51 HGTP14N40F3VL Typical Performance Curves FIGURE 1. TRANSFER CHARACTERISTICS (TYP.) FIGURE 2. SATURATION CHARACTERISTIC (TYP.) FIGURE 3. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE FIGURE 4. OPEN SECONDARY CURRENT AS A FUNCTION OF INDUCTANCE (TYP.) FIGURE 5. CAPACITANCE AS A FUNCTION OF COLLECTOR EMITTER VOLTAGE (TYP.) FIGURE 6. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE, vs PULSE DURATION 3-52 HGTP14N40F3VL Typical Performance Curves (Continued) FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE; TJ = +150oC (TYP.) FIGURE 8. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE (TYP.) FIGURE 9. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE (TYP.) FIGURE 10. INDUCTIVE CURRENT TURN-OFF TIME AS A FUNCTION OF JUNCTION TEMPERATURE (TYP.) FIGURE 11. LEAKAGE CURRENTS AS A FUNCTION OF JUNCTION TEMPERATURE (TYP.) FIGURE 12. THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE (TYP.) 3-53 HGTP14N40F3VL Test Circuits 2.3mH VDD C C RG DUT G E 5V RGE = 50 E 1/RG = 1/RGEN + 1/RGE RGEN = 50 G DUT + VCC L = 550H PULSE GEN - 320V FIGURE 13. USE TEST CIRCUIT FIGURE 14. INDUCTIVE SWITCHING TEST CIRCUIT Handling Precautions for IGBT's Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT's are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT's can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. Trademark Emerson and Cumming, Inc. 3-54 |
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